| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640226 | Materials Science and Engineering: B | 2005 | 6 Pages |
Abstract
Thin films of zinc-rich ZnxCd1âxSe were grown on GaAs substrate using metal-organic-chemical-vapor-deposition (MOCVD) technique. Bound-longitudinal-optical (B-LO) phonon modes in the first-order and higher-order Raman spectra of ZnxCd1âxSe have been observed for the first time. Presence of these phonon modes are ascribed to impurities in the sample incorporated from the substrate. The modes are explained within the purview of a model used earlier for bound modes in GaP. Photoluminescence spectroscopy also reveals a deep energy band which suppresses the near band edge emission for x = 0.8, an alloy composition for which B-LO phonons are observed.
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Authors
Lalita Gupta, S. Rath, S.C. Abbi,