Indium selenide (In2Se3) thin film for phase-change memory

The static mode switching (dc test) is tested for the 5 μm-sized In2Se3 PRAM device. In the first sweep, the as-grown amorphous In2Se3 resistor showed the high resistance state at low voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the 5 μm-sized In2Se3 PRAM device shows that the reset (crystalline → amorphous) of the device was done with a 70 ns-3.1 V pulse and the set (amorphous → crystalline) of the device was done with a 10 μs-1.2 V pulse. As high as 100 of switching dynamic range (ratio of Rhigh to Rlow) was observed.