| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640254 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/HgxCd1âxTe interface in the s2p2 configuration. The calculated valence band discontinuity of 0.31Â eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point.
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Authors
A.J. Ekpunobi,