| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10640267 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
We have investigated the growth and dielectric properties of K(Ta,Nb)O3 films doped with Ti. Titanium (+4) substitution on the group V (Nb/Ta) site should introduce an acceptor state, thus reducing dielectric losses due to defect-induced donor states. Using 3% Ti-doped targets, K(Ta,Nb)O3:Ti films were grown on MgO(0Â 0Â 1) crystals using pulsed-laser deposition. A reduction in the loss tangent was observed for Ti-doped K(Ta,Nb)O3 relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, dielectric constant, and tunability of K(Ta,Nb)O3:Ti films are reported.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hyung-jin Bae, Jennifer Sigman, David P. Norton, Lynn Boatner,