Article ID Journal Published Year Pages File Type
10641348 Photonics and Nanostructures - Fundamentals and Applications 2012 7 Pages PDF
Abstract
► The performance of an electro-optic metal-insulator-semiconductor-insulator-metal Mach-Zehnder plasmonic modulator on a buried oxide layer was investigated using electromagnetic and carrier transport simulations. ► The subject of research is both timely and important because sub-wavelength confinement of light in plasmonic structures provides the opportunity to integrate photonic devices with silicon electronics on the same platform, with considerably reduced device lengths and power consumption. ► A strongly confined plasmon mode exists in the thin oxide layer between the metal and the semiconductor layer. Electron densities near the oxide/silicon interface were calculated taking account of size-quantisation effects, their presence leads to a large change in the effective plasmon mode index within the MISIM structure for an applied bias. ► Our design exhibits a large change in effective plasmon mode index leading to considerably reduced device length with an acceptable insertion loss.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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