| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 10642303 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 8 Pages | 
Abstract
												Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state â conduction band transitions considered as well.
											Keywords
												
											Related Topics
												
													Physical Sciences and Engineering
													Materials Science
													Electronic, Optical and Magnetic Materials
												
											Authors
												Eduard M. Kazaryan, Artavazd A. Kostanyan, Hayk A. Sarkisyan, 
											