Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10642313 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 7 Pages |
Abstract
We have analyzed the electrorefractive properties of a GaAs/AlGaAs modified five-layer asymmetric coupled quantum well (M-FACQW). The theoretical analyses show that the M-FACQW is expected to exhibit a giant negative electrorefractive index change În in the transparent-wavelength region away from the absorption edge. The influence of fluctuations in layer thickness on the electrorefractive properties of the M-FACQW was also investigated. Although the fluctuation in layer thickness deteriorates the characteristics of În in the M-FACQW, the M-FACQW still maintains a very giant În compared with that of a conventional rectangular quantum well without thickness fluctuation. In addition, we have fabricated the M-FACQW with monolayer accuracy by solid-source molecular beam epitaxy, and measured its photoabsorption current. The experimental results are in good agreement with the calculated properties. This indicates that the M-FACQW has great potential for use in ultra-wideband and low-voltage optical modulators and switches.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Norio Niiya, Taro Arakawa, Kunio Tada, Fumiyuki Tadano, Tatsuya Suzuki, Joo-Hyong Noh, Nobuo Haneji,