Article ID Journal Published Year Pages File Type
10642320 Physica E: Low-dimensional Systems and Nanostructures 2005 4 Pages PDF
Abstract
Self-assembling of isoelectronic C and Sn impurities in Ge is predicted. The formation of the 1C4Sn tetrahedral cells is thermodynamically profitable in Ge-rich CxSnyGe1−x−y (4x
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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Self-assembling of C and Sn in Ge
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