Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10642348 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 7 Pages |
Abstract
We present studies on the electric transport in a lateral GaAs/AlGaAs quantum dot defined by a patterned single connected metallic front-gate. This gate design allows to easily couple a large number of quantum dots and therefore holds high potential in the design of new materials with tailor-made band structures based on quantum dot superlattices of controlled shape. Clear Coulomb diamond structures and well pronounced tunneling peaks observed in experiment indicate that single-electron control has been achieved. However, the dependence on electron density in the heterostructure embedding the dot, which is controlled by an additional back-gate, reveals that transport characteristics are strongly influenced supposedly by potential fluctuations in the dot and lead regions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Andreas Richter, Ken-ichi Matsuda, Tatsushi Akazaki, Tadashi Saku, Hiroyuki Tamura, Yoshiro Hirayama, Hideaki Takayanagi,