Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10642364 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60° dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its bâedge component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.L. Zhang, B. Xu, Z.G. Wang, P. Jin, F.A. Zhao,