Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-μm-thick n-type GaAs layer

By integrating a three-barrier, two-well resonant tunneling structure with a 1.2-μm-thick, slightly doped n-GaAs layer, a photoinduced voltage shift on the order of magnitude of 100 mV in resonant current peaks has been verified at an irradiance of low light power density. The 1.2-μm-thick, slightly doped n-GaAs layer manifests itself of playing an important role in enhancing photoelectric sensitivity.