Article ID Journal Published Year Pages File Type
10642837 Solar Energy 2012 5 Pages PDF
Abstract
► A thin CuGa layer is deposited on the single CuInGa ternary precursor. ► The CuGa layer can enhance the grain growth and increase Ga concentration of CuInGaSe2. ► Increasing Ga concentration can enhance the open circuit voltage (Voc) of CIGS device. ► The Voc and efficiency of the device were increased by about 15% and 27%, respectively.
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Physical Sciences and Engineering Energy Renewable Energy, Sustainability and the Environment
Preview
Improvement of Ga distribution and enhancement of grain growth of CuInGaSe2 by incorporating a thin CuGa layer on the single CuInGa precursor
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