| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10642844 | Solar Energy | 2012 | 6 Pages |
Abstract
⺠Global structural and optoelectronic study of arsenic-doped SnO2 was carried out. ⺠Doping of arsenic in SnO2 can be described by AsâSnO2VSnx+eâ²+Asi. ⺠SnO2-orthorhombic phase in As-doped SnO2 film disappeared at 3.1% As doping level. ⺠Resistivity of 4.6 Ã 10â2 Ω cm was obtained with 0.6% As doping level. ⺠Forming oxygen vacancies improves the conductivity by 400% and mobility by 150%.
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Authors
A.A. Dakhel,