| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10642982 | Solar Energy | 2005 | 4 Pages |
Abstract
The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I-V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature.
Keywords
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Physical Sciences and Engineering
Energy
Renewable Energy, Sustainability and the Environment
Authors
M.P. Deshmukh, J. Nagaraju,