Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10643610 | Superlattices and Microstructures | 2005 | 7 Pages |
Abstract
We propose the idea of developing THz quantum cascade lasers (QCLs) with GaN-based quantum well (QW) structures with significant advantages over the currently demonstrated THz lasers in the GaAs-based material system. While the ultrafast longitudinal optical (LO) phonon scattering in AlGaN/GaN QWs can be used for the rapid depopulation of the lower laser state, the large LO-phonon energy (â¼90Â meV) can effectively reduce the thermal population of the lasing states at higher temperatures. Our analysis of one particular structure has shown that a relatively low threshold current density of 832Â A/cm2 can provide a threshold optical gain of 50/cm at room temperature. We have also found that the characteristic temperature in this structure is as high as 136 K.
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
Greg Sun, Richard A. Soref, Jacob B. Khurgin,