Bi-induced vibrational modes in GaAsBi

We have studied GaAs1−xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm−1 and ∼214 cm−1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm−1 is identified as originating from substitutional Bi at the As site in GaAsBi.