Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10643685 | Superlattices and Microstructures | 2005 | 9 Pages |
Abstract
This paper reports on InGaP/GaAs heterojunction bipolar transistors (HBTs) with a sulfur-treated base layer, which are then compared to InGaP/GaAs HBTs with an InGaP-passivated base layer. Experimental results reveal that the improvement in base leakage current for InGaP-passivated HBTs is due to the inherent low surface recombination velocity associated with an InGaP layer while it is the electronic modification of the GaAs surface for sulfur-treated HBTs. The maximum dc current gain available is β=75 with a base sheet resistance of RB=220Ω/â¡ for a sulfur-passivated HBT. The sulfur-passivated HBTs also exhibit very good linearity over a wide collector current range of 10â5 to 10â1 A. Furthermore, detailed sulfur treatment conditions and effects on device performances including post-treatment stability are investigated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shih-Wei Tan, Hon-Ren Chen, Min-Yuan Chu, Wei-Tien Chen, An-Hung Lin, Meng-Kai Hsu, Tien-Sheng Lin, Wen-Shiung Lour,