Spin-polarized transport in all-metal mesoscopic spin-valve devices

In spintronic devices the spin of the electron as well as its charge is utilized. We have fabricated a spin-valve device consisting of two permalloy electrodes which are connected by a normal-metal strip made of aluminum. By changing the relative alignment of the magnetizations of the electrodes the resistance of the device can be controlled. The domain configurations of the electrodes are imaged by magnetic-force microscopy in external fields at room temperature. In transport measurements at temperatures between 1.8 and 150 K we identify the observed magnetoresistance as a spin-valve effect.