Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10643719 | Superlattices and Microstructures | 2005 | 13 Pages |
Abstract
We have calculated the electronic structure and optical transitions in quantum islands of special geometrical shapes, using the finite element method. In this approach, the wavefunction of a carrier is constructed as a linear combination of a basis set formed by localized functions, built up as a product of three Cartesian cubic β-splines. The variational method is used to determine the best set of coefficients for each state. Three different geometries were used to describe quantum islands in the form of lenses and a pyramid. The first case is a simple cut on a spherical island. The second situation describes a deviation from sphericity, which involves cuts in the spheroidal oblate or prolate shapes. In third situation the carrier is confined inside a pyramidal quantum dot. Single-particle transitions for GaAs/Ga1âxAlxAs and InAs/InP heterostructures, as well as for GaAs and CdTe dots surrounded by a vacuum or embedded in glass matrices, were calculated using the simple four-band model to describe the electron and hole energy levels in a zinc-blende semiconductor structure near theÎ-point.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
FabrÃzio M. Alves, F. Aristone, G.E. Marques,