Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10644601 | Computational Materials Science | 2005 | 17 Pages |
Abstract
Electromigration is a major road block in the pursuit of further miniaturized electronics. In the next generation micro and sub micro electronics current density is expected to exceed 107Â A/cm2. In this paper an electromigration induced strain-current density model is proposed and implemented in finite element procedure for solution of boundary/initial value electromigration problems. Numerical simulations are compared with experimental data. Comparisons validate the model.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Minghui Lin, Cemal Basaran,