Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10644671 | Computational Materials Science | 2005 | 7 Pages |
Abstract
Ti-porcelain systems have been used in prosthetic dentistry since 1980. The chemical bonding in this kind of systems is generally attributed to oxidic compounds. The porcelain functions as an O donator and stoichiometric and non-stoichiometric titanium oxides are formed at the interface. These oxides result in substantial distortion of the crystalline structure and failure of bonding. A useful technique for surface conditioning is the silicon-ion implantation, which results in the formation of a metal-silicon zone protecting against O diffusion. In dental materials technology, processes on the atomic scale have been investigated insufficiently or not at all. In this work, we present ab initio calculations on the energetics of an O interstitial in a Ti crystal. The aim of our study is getting new insight into the atomic scale properties of these Ti-porcelain systems.
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Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
I. Lado-Touriño, F. Tsobnang,