| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653072 | Solid State Communications | 2011 | 6 Pages |
Abstract
⺠A systematic study of SiC nanotubes (n,n)@(m,m) (3â¤nâ¤6;7â¤mâ¤12). ⺠Geometries of tubes are optimized using the functional B3LYP and the 3-21G* basis. ⺠Formation energy is maximum when the interlayer separation is about 3.5 Ã
.⺠(5,5)@(9,9) is the most stable with B.E./atom and formation energy of 5.07 and 12.39 eV. ⺠All DWNTs are semiconductors, with band gaps decreasing from SWNTs to DWNTs.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Adhikari, A.K. Ray,