Article ID Journal Published Year Pages File Type
10653104 Solid State Communications 2011 4 Pages PDF
Abstract
► The dual floating gate memory device shows a successful multi-state operation. ► Laterally separated regions are used embedded with Al nanoparticles as charge nodes. ► The memory device is programmed by the F-N tunneling and CHE injection method. ► Four different states are achieved through operating the memory.
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
Authors
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