Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653104 | Solid State Communications | 2011 | 4 Pages |
Abstract
⺠The dual floating gate memory device shows a successful multi-state operation. ⺠Laterally separated regions are used embedded with Al nanoparticles as charge nodes. ⺠The memory device is programmed by the F-N tunneling and CHE injection method. ⺠Four different states are achieved through operating the memory.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Sungsu Kim, Kyoungah Cho, Sangsig Kim,