| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653108 | Solid State Communications | 2011 | 4 Pages |
Abstract
⺠We demonstrate the growth of (In, Mn)As nanowires on GaAs(001) by MBE. ⺠Critical growth condition is with high Mn concentration and high growth temperature. ⺠The nanowires align along [â110]GaAs and show uniaxial magnetic anisotropy.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
F. Xu, P.W. Huang, J.H. Huang, R.T. Huang, W.N. Lee, T.S. Chin, Y.W. Du,