Control of the interfacial reactivity in the Ni/Si system

The reactivity at the Ni/Si interface is studied as a function of the sputtering conditions of the nickel film. Four systems are considered, by combining two different sputtering rates and two distinct base pressures for the deposition of the nickel 10 nm-thick film. The formation of Ni2Si is revealed at the four interfaces by an X-ray emission spectroscopy study of the interfacial Si 3p occupied valence states. Increasing the sputtering rate is herein evidenced to decrease the quantity of silicide formed at the interface. Moreover, the combination of a high sputtering rate and a low base pressure advantageously prevents against the oxidization of the silicon surface during the metal deposition.