Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653158 | Solid State Communications | 2005 | 5 Pages |
Abstract
Magnetic properties of amorphous Ge1âxMnx thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was â¼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge1âxMnx thin films are 5.0Ã10â4â¼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge1âxMnx thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge1âxMnx thin films have p-type carrier and hole densities are in the range from 7Ã1017 to 2Ã1022 cmâ3.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Sang Soo Yu, Tran Thi Lan Anh, Young Eon Ihm, Dojin Kim, Hyojin Kim, Sangjun Oh, Chang Soo Kim, Hyun Ryu,