| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653165 | Solid State Communications | 2005 | 4 Pages |
Abstract
The mechanism of formation of a thin highly conductive layer, which is known to be present on ZnO surface, has been proposed. This process has been assumed to consist in accumulation of mobile shallow donors at crystal surface due to their drift in band-bending electric field caused by adsorbed oxygen. Experimental results that confirm this mechanism have been obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
I.V. Markevich, V.I. Kushnirenko, L.V. Borkovska, B.M. Bulakh,