Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653214 | Solid State Communications | 2005 | 6 Pages |
Abstract
The amorphization of crystalline Si (100) under 125Â keV O+ ion implantation is investigated in the fluence range 1Ã1014Â ions/cm2 to 1Ã1016Â ions/cm2. The microstructure of the O+ implanted Si is modeled from ellipsometric data using a two phase, multilayer model within Bruggeman effective medium approximation (BEMA). The transition from the crystalline to the amorphous phase is found to be smooth and progressive. From a detailed analysis of the moments of the dielectric spectra and laser Raman spectroscopy, we infer that the amorphization occurs through a progressive disruption of long-range order caused by the overlap of amorphous nanozones. The dielectric spectrum of the fully amorphous phase is characterized using the Forouhi-Bloomer interband model.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
R. Prabakaran, G. Raghavan, S. Tripura Sundari, R. Kesavamoorthy,