Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653459 | Solid State Communications | 2005 | 5 Pages |
Abstract
Results of electrical resistance measurements on MgB2 at ambient temperature up to 25Â GPa are presented. An abrupt reduction of nearly 30% in resistance around 18Â GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the Ï-band opens along the Î-A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Alka B. Garg, A.K. Verma, P. Modak, D.M. Gaitonde, R.S. Rao, V. Vijayakumar, B.K. Godwal,