Article ID Journal Published Year Pages File Type
10653459 Solid State Communications 2005 5 Pages PDF
Abstract
Results of electrical resistance measurements on MgB2 at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the σ-band opens along the Γ-A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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