| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653465 | Solid State Communications | 2005 | 5 Pages |
Abstract
Fano lineshapes in resonant transmission in a quantum dot imply interference between localized and extended states. The influence of the charge accumulated at the localized levels, which screens the external gate voltage acting on the conduction channel is investigated. The modified Fano q parameter and the resonant conduction is derived starting from a microscopic Hamiltonian. The latest experiments on 'charge sensing' and 'Coulomb modified Fano sensing' compare well with the results of the present model.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Piotr StefaÅski, Arturo Tagliacozzo, Bogdan R. BuÅka,