Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653512 | Solid State Communications | 2005 | 6 Pages |
Abstract
The aim of this work is to study the dynamic formation and dissociation of trions and excitons in double barrier resonant tunneling diodes. We propose a system of rate equations that takes into account the formation, dissociation and annihilation of these complexes inside the quantum well. From the solutions of the coupled equations, we are able to study the modulation of excitons and trions formation in the device as a function of the applied bias. The results of our model agree qualitatively with the experiments showing the viability of these rate equations system to study the dynamics of complex systems.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
I. Camps, S.S. Makler, A. Vercik, Y. Galvão Gobato, G.E. Marques, M.J.S.P. Brasil,