Article ID Journal Published Year Pages File Type
10653584 Solid State Communications 2005 5 Pages PDF
Abstract
Magnetic properties of p-doped GaMnN diluted magnetic semiconductors, having both randomly distributed Mn ions and MnxNy clusters, are presented under the theory based on the hole-mediated ferromagnetism. The critical temperature of the second order phase transition between ferromagnetic and paramagnetic phases and the magnetization as a function of temperature are obtained from the free energy calculation. The Curie temperature of the p-doped GaMnN containing clusters depends not on the type of clusters but on the composition rate of clusters. The behavior of the spontaneous magnetization as a function of temperature is strongly affected by carrier concentration. The p-doped GaMnN diluted magnetic semiconductors containing clusters have room temperature ferromagnetism regardless of the magnetic type of clusters, as long as hole-mediated spin-spin interactions occur in them.
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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