| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653592 | Solid State Communications | 2005 | 4 Pages |
Abstract
Lanthanum-substituted bismuth titanate, Bi3.5La0.5Ti3O12 (i.e., x=0.5 in Bi4âxLaxTi3O12), thin films have been grown on Pt/Ti/SiO2/Si substrates using pulsed laser deposition. The frequency dependence of the real part εâ²(Ï) and the imaginary part εâ³(Ï) of the dielectric constant has been studied. The εâ²(Ï) does not show any sudden change within the frequency range of 102-106 Hz. In contrast, the εâ³(Ï) shows a large dispersion as frequency decreases. The observed relaxation behavior in εâ³(Ï) can be explained in terms of a migration of oxygen vacancies in (Bi2O2)2+ layers, not in Bi2Ti3O10 perovskite layers.
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Authors
S.D. Bu,