| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10653699 | Solid State Communications | 2005 | 4 Pages |
Abstract
Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the femtosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Guangjun Zhang, Donghong Gu, Xiongwei Jiang, Qingxi Chen, Fuxi Gan,