Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10653703 | Solid State Communications | 2005 | 6 Pages |
Abstract
We have investigated the origin of room temperature photoluminescence from ion-beam synthesized Ge nanocrystals (NCs) embedded in SiO2 using steady state and time-resolved photoluminescence (PL) measurements. Ge NCs of diameter 4-13Â nm were grown embedded in a thermally grown SiO2 layer by Ge+ ion implantation and subsequent annealing. Steady state PL spectra show a peak at â¼2.1Â eV originating from Ge NCs and another peak at â¼2.3Â eV arising from ion-beam induced defects in the SiO2 matrix. Time-resolved PL studies reveal double exponential decay dynamics on the nanoseconds time scale. The faster component of the decay with a time constant Ï1â¼3.1Â ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant Ï2â¼10Â ns is attributed to radiative recombination at the Ge NCs. Our results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
P.K. Giri, R. Kesavamoorthy, B.K. Panigrahi, K.G.M. Nair,