Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10654165 | Solid State Communications | 2005 | 6 Pages |
Abstract
The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5Â eV/ps.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Chengbin Li, Donghai Feng, Tianqing Jia, Haiyi Sun, Xiaoxi Li, Shizhen Xu, Xiaofeng Wang, Zhizhan Xu,