| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 10655491 | Intermetallics | 2011 | 5 Pages | 
Abstract
												⺠Te was successfully substituted for Sb in Zn4Sb3. ⺠ZT for doped compounds was greater than that of un-doped Zn4Sb3. ⺠In particular, ZT of Zn4(Sb0.995Te0.005)3 reached a value of 1.08 at 680 K. ⺠Our results indicate Te doping is an efficient way in improving TE properties.
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											Authors
												D. Li, X.Y. Qin, 
											