Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10656252 | Journal of Alloys and Compounds | 2016 | 5 Pages |
Abstract
Three tensile GaInP quantum well laser diode wafers were grown in the same run by low-pressure metalorganic vapor phase epitaxy on GaAs substrates misoriented by 10°, 15°, and 22° toward (1 1 1)A respectively. The photoluminescence peak wavelength and intensity of the active region, the strain mismatch and the doping carrier concentration of the epitaxial layers, the whole thickness and the surface morphology of the wafers were all found to be strongly dependent on the misorientation of the substrates. Considering the comprehensive effects of material, electrical, and optical properties, the 15° substrate was superior to the 10° substrate for the growth of shorter wavelength red-light laser diode wafer, while substrate with too large misorientation of 22° was not a good choice for the epitaxy of red-light laser diode wafer.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Tao Lin, Nan Lin, Cong Xiong, Li Zhong, Qiong Qi, Yihao Zhao, Cuiluan Wang, Enmin Guo, Suping Liu, Xiaoyu Ma,