Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10656262 | Journal of Alloys and Compounds | 2016 | 5 Pages |
Abstract
Layered compound NdOZnSb is isostructural to ZrSiCuAs with insulating [NdO] layers and conductive [ZnSb] layers alternatively stacked along the c axis. As a narrow band-gap p-type semiconductor, NdOZnSb has lower electrical conductivity, resulting in poor thermoelectric performance despite considerably high Seebeck coefficient and low thermal conductivity. Polycrystalline samples Nd1âxSrxOZnSb have been prepared with the aim to increase the hole concentration and improve the electrical properties via p-type doping. It is found that the electrical conductivity increases almost 9 times with 7% Sr concentration in comparison to the undoped sample at 325Â K. Thus, the thermoelectric figure of merit has been improved significantly.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Meng Pan, Ke Wang, Wanyu Lv, Dongli Hu, Kai Guo, Xinxin Yang, Jing-Tai Zhao,