Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

Annealing temperature dependent electrical properties of sol-gel-derived ZrTiOx gate dielectrics were symmetrically investigated. It can be concluded that 300 °C-annealed ZrTiOx MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7 × 10−4 A/cm2 were obtained. The dominant conduction mechanisms of MOS structures were also determined.160