Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10656274 | Journal of Alloys and Compounds | 2016 | 8 Pages |
Abstract
Annealing temperature dependent electrical properties of sol-gel-derived ZrTiOx gate dielectrics were symmetrically investigated. It can be concluded that 300 °C-annealed ZrTiOx MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7 Ã 10â4 A/cm2 were obtained. The dominant conduction mechanisms of MOS structures were also determined.160
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
D.Q. Xiao, G. He, M. Liu, J. Gao, P. Jin, S.S. Jiang, W.D. Li, M. Zhang, Y.M. Liu, J.G. Lv, Z.Q. Sun,