| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10656583 | Journal of Alloys and Compounds | 2012 | 7 Pages |
Abstract
⺠Highly transparent GZO semiconductor thin films were prepared by sol-gel process. ⺠Doping the ZnO thin films with Ga obviously reduced surface roughness, decreased electrical resistivity, and improved transparency. ⺠The PL spectra of GZO thin films showed strong violet-light emission centers at about 2.86 eV. ⺠The 2% Ga-doped ZnO thin films exhibited the lowest average resistivity among all of the GZO thin films. ⺠GZO thin films were attained with a Ga dopant level of 2%, semiconductors of which can be used for transparent electronics.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Chien-Yie Tsay, Kai-Shiung Fan, Chien-Ming Lei,