| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10656674 | Journal of Alloys and Compounds | 2011 | 5 Pages |
Abstract
Cu(In,Ga)Se2 thin films were prepared from aqueous solution by pulse electrodeposition. It was found that the co-deposition of the species occurred under a 3D growth with instantaneous nucleation. The morphology of the pulse-electrodeposited film can be improved by adjusting the duty cycle. The significant loss of indium and reduction of In-Se compound(s) accordingly were observed with decrease of duty cycle. Chalcopyrite structure Cu(In,Ga)Se2 films with p-type behavior and enhancement in crystallinity were obtained after annealing treatment in Ar atmosphere.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Fangyang Liu, Chun Huang, Yanqing Lai, Zhian Zhang, Jie Li, Yexiang Liu,