| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10656718 | Journal of Alloys and Compounds | 2011 | 5 Pages |
Abstract
Conductor and semiconductor ZITO transparent oxide thin films have been obtained by co-sputtering system. Therefore, we could fabricate a fully transparent ZITO optoelectronic device (thin film transistors or photodetector) in the future. The conducting ZITO was used as the electrode. The active layer of TFTs and photodetector employed the semiconducting ZITO. In addition, the investigation of luminescence characteristics on Zn-In-Sn-O (ZITO) film has never been reported. So, the multi-compound ZITO (ZnO combined ITO) films would be measured by photoluminescence (PL) to analyze the effects of ITO doping and oxygen gas content on emission characteristics of film.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
K.J. Chen, F.Y. Hung, S.J. Chang, S.P. Chang, Y.C. Mai, Z.S. Hu,