Article ID Journal Published Year Pages File Type
10666251 Materials Letters 2005 4 Pages PDF
Abstract
Copper matrix composites reinforced with 3D-silicon carbide network were prepared by squeeze casting process at 1150 °C. The interfacial reaction during preparation was studied by means of energy-dispersive X-ray spectroscopy analyzer (XEDS) attached to scanning electron microscope (SEM), X-ray diffractometry (XRD), transmission electron microscope (TEM) and analytical electron microscope (AEM). This study revealed that silicon in the 3D-SiC network reacted with copper producing Cu3Si, while SiC itself did not react with copper under the experiment conditions. The shape of present Cu3Si was mainly lathy distribution in the composites and some cracks were found in it. Avoiding remnants silicon of the 3D-SiC network could prevent from the reaction of Cu3Si.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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