Copper selenide thin films prepared using combination of chemical precipitation and dip coating method

A novel method has been developed for the preparation of copper selenide thin films. The method is based on a combination of chemical precipitation of copper selenide powders and a dip coating technique using this powder. The synthesized powder and deposited thin films at various dip coatings were analyzed using X-ray diffractometry and scanning electron microscopy (SEM). X-ray diffraction data of the thin films indicate formation of polycrystalline materials. The SEM micrographs showed formation of compact and granular morphology for the film deposited after four dip coatings. The thin films produced were found to display p-type semiconductor behavior.