| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10666340 | Materials Letters | 2005 | 5 Pages |
Abstract
By using SrZrO3/(Y2O3)x(ZrO2)1âx buffer layers, it is possible to obtain a-axis oriented SrBi2Ta2O9 thin films on silicon by laser deposition. Using evanescent wave X-ray measurements, we show that at lower deposition pressures the films present two phases with up to 25% a-axis and the rest (116) orientation. At higher pressures, the a-axis orientation is only obtained for larger energies per pulse of the irradiating laser. From our results, we expect that further optimisation in the degree of a-axis orientation can be achieved.
Related Topics
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Materials Science
Nanotechnology
Authors
Dana Miu, J.C. Martinez, L. Wiehl, R. Raitieri, H. Adrian,