| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10666513 | Materials Letters | 2005 | 4 Pages |
Abstract
ZnGa2O4:Mn thin film phosphors were prepared on ITO/glass by rf magnetron reactive sputtering. The effects of the oxygen partial pressure in sputtering and annealing atmospheres on crystallinity, compositional variations, and luminescent properties of thin films were investigated. Atomic ratio of Ga/Zn in films strongly depended on the postannealing conditions, as well as the oxygen partial pressure in sputtering gas during sputtering, and accordingly affected the luminous properties.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sung Mook Chung, Sang Hyuk Han, Young Jin Kim,