| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668226 | Surface and Coatings Technology | 2012 | 5 Pages |
Abstract
⺠The contact resistivity was decreased to 9.94 Ã 10â 5 Ω cm2 by H2 plasma treatment. ⺠The process was carried out at room temp. without any step of thermal treatment. ⺠The mechanism of enhancing the contact resistance was clarified with XPS results. ⺠HCl treatment eliminated In clusters formed on surface, improving transmittance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Su-Hwan Yang, Jun Young Kim, Min Joo Park, Kwang-Hyuk Choi, Joon Seop Kwak, Han-Ki Kim, Ji-Myon Lee,