| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668237 | Surface and Coatings Technology | 2012 | 6 Pages |
Abstract
⺠We introduce DC remote plasma assisted sputtering source. ⺠Higher sputtering current (< 3.8 A) than RF excited remote plasma sputtering current(< 1 A). ⺠High target utilization efficiency (> 90%) of sputtering cathode. ⺠Independent control of sputtering voltage and current. ⺠Applicable from low voltage high current sputtering to high current high voltage sputtering.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Seunghun Lee, Jong-Kuk Kim, Jae-Wook Kang, Do-Geun Kim,