| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668285 | Surface and Coatings Technology | 2011 | 6 Pages |
Abstract
⺠Sputtering of SiC and Si target in gas mixture of Ar andCH4 is compared. ⺠Increase of carbon from 50 to 70 at.% leads to decrease of hardness and modulus. ⺠Small addition of CH4 results in decrease of friction for films from the SiC target. ⺠SiC sputtering allows to get a-SiC films with high hardness and low friction. ⺠Films with C/Si > 1 posses hardness of 18 GPa and friction coefficient of ~ 0.15.
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Authors
V. Kulikovsky, V. Vorlicek, R. Ctvrtlik, P. Bohac, J. Suchanek, O. Blahova, L. Jastrabik,